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Toshiba Semiconductor and Storage TPC8110(TE12L,Q,M)
MOSFET P-CH 40V 8A SOP8 2-6J1B
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOP (5.5x6.0)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 107nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5710pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.173", 4.40mm Width)
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 5.5A, 10V