Toshiba Semiconductor and Storage TPC8065-H,LQ(S

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

550mOhm @ 500mA, 4.5V

Series

-

Power Dissipation (Max)

280mW (Ta)

FET Type

N-Channel

Supplier Device Package

SC-89-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Vgs(th) (Max) @ Id

1V @ 250µA