Toshiba Semiconductor and Storage TPC8062-H,LQ(CM

Product Details

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

600mOhm @ 1A, 10V

Series

CoolMOS™ CE

Power Dissipation (Max)

86W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220-3-31 Full Pack

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

700V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

474pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

3.5V @ 210µA