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Toshiba Semiconductor and Storage TPC8038-H(TE12L,Q)
MOSFET N-CH 30V 12A SOP8 2-6J1B
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.173", 4.40mm Width)
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 4A, 10V
- Series
- U-MOSIII
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOP (5.5x6.0)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 48nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2180pF @ 10V