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Toshiba Semiconductor and Storage TPC6111(TE85L,F,M)
MOSFET P-CH 20V 5.5A VS-6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1277
Product Details
- Vgs(th) (Max) @ Id
- 2.2V @ 13µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 27.5mOhm @ 7.5A, 10V
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 3.4W (Ta), 24W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8.1A (Ta), 21A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN, 5 Leads