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Toshiba Semiconductor and Storage TPC6010-H(TE85L,FM
MOSFET N-CH 60V 6.1A VS6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2V @ 500µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13mOhm @ 5A, 10V
- Series
- U-MOSVI
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 64nC @ 10V
- Vgs (Max)
- +20V, -25V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2580pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V