Toshiba Semiconductor and Storage TK9J90E,S1E

Product Details

Packaging

Tube

Supplier Device Package

TO-247-3

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1154pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

3.5A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-247-3

Base Part Number

STW5N

Vgs(th) (Max) @ Id

4.5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

SuperMESH3™

Rds On (Max) @ Id, Vgs

3.7Ohm @ 1.75A, 10V

FET Type

N-Channel

Power Dissipation (Max)

125W (Tc)