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Toshiba Semiconductor and Storage TK9A65W,S5X
MOSFET N-CH 650V 9.3A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.79
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.6mOhm @ 20A, 10V
- Series
- -
- Power Dissipation (Max)
- 2.1W (Ta), 500W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 215nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 75V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 10350pF @ 37.5V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 21.5A (Ta), 140A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3