Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK8S06K3L(T6L1,NQ)
MOSFET N-CH 60V 8A DPAK-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.46
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 900mOhm @ 2A, 10V
- Series
- aMOS™
- Power Dissipation (Max)
- 56.8W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-251A
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 6nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 263pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Vgs(th) (Max) @ Id
- 4.1V @ 250µA