Toshiba Semiconductor and Storage TK8A45DA(STA4,Q,M)

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2450pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

5.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

25mOhm @ 35.4A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

100V