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Toshiba Semiconductor and Storage TK80S06K3L(T6L1,NQ
MOSFET N-CH 60V 80A DPAK-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.84
- Stock
- 0
Product Details
- Series
- -
- Power Dissipation (Max)
- 3.9W (Ta), 113A (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-LFPAK
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 52nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3600pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.9A (Ta), 113A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSMD, Gull Wing
- Vgs(th) (Max) @ Id
- 2V @ 135µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 50A, 10V