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Toshiba Semiconductor and Storage TK6Q65W,S1Q
MOSFET N-CH 650V 5.8A IPAK-OS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.03
- Stock
- 0
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vgs(th) (Max) @ Id
- 2.4V @ 10mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 300mOhm @ 3A, 10V
- Series
- -
- Power Dissipation (Max)
- 1W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-92-3
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 50V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 1.2A (Tj)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Part Status
- Active