Toshiba Semiconductor and Storage TK6Q60W,S1VQ

Product Details

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

82mOhm @ 12A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V