Toshiba Semiconductor and Storage TK65S04N1L,LQ

Product Details

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

80mOhm @ 4A, 10V

Series

TrenchFET®

Power Dissipation (Max)

1.56W (Ta)

FET Type

N-Channel

Supplier Device Package

8-SO

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

2.85A (Ta)