Toshiba Semiconductor and Storage TK65S04K3L(T6L1,NQ

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.2Ohm @ 4.5A, 10V

Series

-

Power Dissipation (Max)

28W (Tc)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

700V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1630pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-262-3 Full Pack, I²Pak

Vgs(th) (Max) @ Id

4.5V @ 250µA