Toshiba Semiconductor and Storage TK65E10N1,S1X

Product Details

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack, Isolated Tab

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

50mOhm @ 12A, 5V

Series

-

Power Dissipation (Max)

42W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

35nC @ 5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V