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Toshiba Semiconductor and Storage TK62J60W,S1VQ
MOSFET N CH 600V 61.8A TO-3P(N)
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 14.18
- Stock
- 109
Product Details
- Series
- HiPerFET™, PolarHT™
- Power Dissipation (Max)
- 1040W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PLUS247™-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 198nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 12000pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 44A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 5V @ 8mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 190mOhm @ 22A, 10V