Toshiba Semiconductor and Storage TK5Q65W,S1Q

Product Details

Rds On (Max) @ Id, Vgs

11.8mOhm @ 70A, 10V

Series

OptiMOS™

Power Dissipation (Max)

125W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-3-2

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

5550pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.4V @ 83µA

Operating Temperature

-55°C ~ 175°C (TJ)