Toshiba Semiconductor and Storage TK5Q60W,S1VQ

Product Details

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4.5V @ 1.9mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

165mOhm @ 9.5A, 10V

Series

SuperFET® III

Power Dissipation (Max)

154W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole