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Toshiba Semiconductor and Storage TK5A65DA(STA4,Q,M)
MOSFET N-CH 650V 4.5A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.28
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 95nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2840pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5mOhm @ 75A, 10V
- Power Dissipation (Max)
- 140W (Tc)
- Series
- HEXFET®
- Supplier Device Package
- TO-220AB