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Toshiba Semiconductor and Storage TK5A55D(STA4,Q,M)

MOSFET N-CH 550V 5A TO-220SIS

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
1.12
Stock
0

Product Details

FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4.2V @ 250µA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
15mOhm @ 25A, 10V
Series
-
Power Dissipation (Max)
35W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220F
Packaging
Bulk
Drain to Source Voltage (Vdss)
50V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 10V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
50A (Ta)