Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK58E06N1,S1X
MOSFET N CH 60V 58A TO-220
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.27
- Stock
- 62
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 500µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.4mOhm @ 29A, 10V
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 35W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220SIS
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 46nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3400pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 58A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack