Toshiba Semiconductor and Storage TK560P60Y,RQ

Product Details

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

1.6V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.7mOhm @ 22A, 8V

Series

NexFET™

Power Dissipation (Max)

3.2W (Ta)

FET Type

N-Channel

Supplier Device Package

8-VSONP (5x6)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

15.3nC @ 4.5V

Vgs (Max)

+10V, -8V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

3V, 8V

Mounting Type

Surface Mount