Toshiba Semiconductor and Storage TK55D10J1(Q)

Product Details

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

55mOhm @ 2.2A, 4.5V

Series

U-MOSIV

Power Dissipation (Max)

700mW (Ta)

FET Type

P-Channel

Supplier Device Package

VS-6 (2.9x2.8)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

2V, 4.5V

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id

1.2V @ 200µA