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Toshiba Semiconductor and Storage TK4P55DA(T6RSS-Q)

MOSFET N-CH 550V 3.5A DPAK-3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
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Stock
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Product Details

Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
-
Operating Temperature
-
Rds On (Max) @ Id, Vgs
12mOhm @ 25A, 10V
Power Dissipation (Max)
-
Series
-
Supplier Device Package
TO-220-3
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Packaging
Tube
Drain to Source Voltage (Vdss)
75V