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Toshiba Semiconductor and Storage TK4A60D(STA4,Q,M)
MOSFET N-CH 600V 4A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.3V @ 100µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 310mOhm @ 600mA, 10V
- Series
- π-MOSVI
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- UFM
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 36pF @ 10V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 1.2A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads