Toshiba Semiconductor and Storage TK46E08N1,S1X

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1645pF @ 4V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 2.5V

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id

750mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

11mOhm @ 8A, 2.5V

Series

-

Power Dissipation (Max)

2.8W (Ta)

FET Type

N-Channel

Supplier Device Package

6-DFN-EP (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±5V

Drain to Source Voltage (Vdss)

8V