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Toshiba Semiconductor and Storage TK3R1P04PL,RQ
MOSFET N-CHANNEL 40V 58A DPAK
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 4898
Product Details
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.1mOhm @ 15A, 10V
- Series
- TrenchFET® Gen IV
- Power Dissipation (Max)
- 54.3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 111nC @ 10V
- Vgs (Max)
- +20V, -16V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5060pF @ 15V
- FET Feature
- Schottky Diode (Body)
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount