Toshiba Semiconductor and Storage TK3P50D,RQ(S

Product Details

Rds On (Max) @ Id, Vgs

23mOhm @ 21A, 10V

Series

OptiMOS™

Power Dissipation (Max)

100W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3-11

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

901pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 50µA

Operating Temperature

-55°C ~ 175°C (TJ)