Toshiba Semiconductor and Storage TK3A60DA(Q,M)

Product Details

Base Part Number

STP95

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Series

STripFET™ III

Rds On (Max) @ Id, Vgs

6.2mOhm @ 40A, 10V

FET Type

N-Channel

Power Dissipation (Max)

110W (Tc)

Packaging

Tube

Supplier Device Package

TO-220AB

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-220-3