Toshiba Semiconductor and Storage TK39N60X,S1F

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-273AA

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

23mOhm @ 59A, 10V

Series

HEXFET®

Power Dissipation (Max)

650W (Tc)

FET Type

N-Channel

Supplier Device Package

SUPER-220™ (TO-273AA)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6080pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

98A (Tc)