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Toshiba Semiconductor and Storage TK39N60W5,S1VF
MOSFET N-CH 600V 38.8A T0247
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 7.72
- Stock
- 2460
Product Details
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 3750pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 52A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-247-4
- Base Part Number
- STW56N
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- MDmesh™ M2
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 26A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 350W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-247-4L
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 91nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V