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Toshiba Semiconductor and Storage TK39J60W,S1VQ
MOSFET N-CH 600V 38.8A TO-3P
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 9.28
- Stock
- 41
Product Details
- Series
- CoolMOS™
- Power Dissipation (Max)
- 417W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247 [B]
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 154nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4020pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 53A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.5V @ 1.72mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 25.8A, 10V