Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK34E10N1,S1X
MOSFET N-CH 100V 75A TO-220
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.37
- Stock
- 87
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- Power56
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 6V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6215pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 151A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4V @ 370µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.2mOhm @ 67A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 138W (Tc)