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Toshiba Semiconductor and Storage TK31V60X,LQ

MOSFET N-CH 600V 30.8A 5DFN

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
2347

Product Details

Part Status
Active
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number
STB13N
Vgs(th) (Max) @ Id
5V @ 100µA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
SuperMESH5™
Rds On (Max) @ Id, Vgs
450mOhm @ 6A, 10V
FET Type
N-Channel
Power Dissipation (Max)
190W (Tc)
Packaging
Digi-Reel®
Supplier Device Package
D2PAK
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 100V