Toshiba Semiconductor and Storage TK31V60W5,LVQ

Product Details

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2.5V @ 500µA

Operating Temperature

175°C (TJ)

Rds On (Max) @ Id, Vgs

7.2mOhm @ 15A, 4.5V

Series

U-MOSIX-H

Power Dissipation (Max)

87W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

48.2nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3280pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Through Hole