Toshiba Semiconductor and Storage TK31N60X,S1F

Product Details

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id

4.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

110mOhm @ 18A, 10V

Series

PolarP™

Power Dissipation (Max)

300W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-3P

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V