Toshiba Semiconductor and Storage TK30E06N1,S1X

Product Details

Operating Temperature

175°C (TJ)

Series

STripFET™

Rds On (Max) @ Id, Vgs

3.2mOhm @ 40A, 10V

FET Type

N-Channel

Power Dissipation (Max)

158W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

H2PAK-6

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Base Part Number

STH140

Vgs(th) (Max) @ Id

4V @ 250µA