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Toshiba Semiconductor and Storage TK2P60D(TE16L1,NQ)
MOSFET N-CH 600V 2A PW-MOLD
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.4
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 55nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4300pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 66A (Ta), 45A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 500µA
- Operating Temperature
- 150°C
- Rds On (Max) @ Id, Vgs
- 6.3mOhm @ 22.5A, 10V
- Power Dissipation (Max)
- 2.5W (Ta), 54W (Tc)
- Series
- U-MOSVIII-H
- Supplier Device Package
- 8-SOP Advance (5x5)