Toshiba Semiconductor and Storage TK290P60Y,RQ

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

59mOhm @ 12A, 10V

Series

-

Power Dissipation (Max)

113W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK56, Power-SO8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

27.9nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1529pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

4V @ 1mA