Toshiba Semiconductor and Storage TK28N65W,S1F

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

165mOhm @ 11.3A, 10V

Series

-

Power Dissipation (Max)

120W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V