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Toshiba Semiconductor and Storage TK25E60X,S1X
MOSFET N-CH 600V 25A TO-220AB
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 3.82
- Stock
- 100
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 110W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-247-3
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 7A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Base Part Number
- STW7N
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- MDmesh™ K5
- Rds On (Max) @ Id, Vgs
- -