Toshiba Semiconductor and Storage TK25E06K3,S1X(S

Product Details

FET Type

N-Channel

Supplier Device Package

PG-TO262-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

900V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

710pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.1A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

3.5V @ 310µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.8A, 10V

Series

CoolMOS™

Power Dissipation (Max)

83W (Tc)