Toshiba Semiconductor and Storage TK25A60X,S5X

Product Details

Series

-

Power Dissipation (Max)

54W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1000V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4.5V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

11Ohm @ 1A, 10V