Toshiba Semiconductor and Storage TK22E10N1,S1X

Product Details

Rds On (Max) @ Id, Vgs

13.8mOhm @ 11A, 10V

Series

U-MOSVIII-H

Power Dissipation (Max)

30W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220SIS

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4V @ 300µA

Operating Temperature

150°C (TJ)