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Toshiba Semiconductor and Storage TK22A10N1,S4X
MOSFET N-CH 100V 52A TO-220
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.34
- Stock
- 39
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 500µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.5mOhm @ 17A, 10V
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 103W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2600pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)