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Toshiba Semiconductor and Storage TK20S06K3L(T6L1,NQ
MOSFET N-CH 60V 20A DPAK-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.49
- Stock
- 0
Product Details
- Series
- -
- Power Dissipation (Max)
- 850mW (Ta), 20W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- CPT3
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 250V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 840pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 530mOhm @ 3A, 10V