Toshiba Semiconductor and Storage TK20P04M1,RQ(S

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

195pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

20Ohm @ 500mA, 10V

Series

QFET®

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

FET Type

N-Channel

Supplier Device Package

I-PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

800V