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Toshiba Semiconductor and Storage TK20A60U(Q,M)

MOSFET N-CH 600V 20A TO-220SIS

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
5.47
Stock
249

Product Details

FET Type
N-Channel
Supplier Device Package
PG-TO247-3-41
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1752pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.5V @ 470µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
105mOhm @ 9.3A, 10V
Series
CoolMOS™
Power Dissipation (Max)
106W (Tc)