Toshiba Semiconductor and Storage TK20A25D,S5Q(M

Product Details

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

175°C (TJ)

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Series

U-MOSIV

Power Dissipation (Max)

93W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK+

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount